位置:FLL107ME > FLL107ME详情
FLL107ME中文资料
FLL107ME数据手册规格书PDF详情
DESCRIPTION
The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base station applications. This device is assembled in hermetic metal/ceramic package.
Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance
FEATURES
• High Output Power: P1dB=29.5dBm (Typ.)
• High Gain: G1dB=13.5dB (Typ.)
• High PAE: ηadd=47 (Typ.)
• Proven Reliability
• Hermetically Sealed Package
FLL107ME产品属性
- 类型
描述
- 型号
FLL107ME
- 制造商
SUMITOMO ELECTRIC Device Innovations Inc
- 功能描述
Single-end,L-Band, 13.5dB, 2.3GHz, 180mA, Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
EUDYNA |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
|||
EUDYNA |
23+ |
NA |
5000 |
公司只做原装,可配单 |
|||
SUMITOMO |
2021+ |
SMT |
3600 |
一级代理销售住友SUMITOMO高频,射频,晶体,微波管 |
|||
FUJITSU |
24+ |
SMD |
14 |
全新原装 正品现货 |
|||
FUJI |
20+ |
高频 |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
FUJITSU/富士通 |
23+ |
1688 |
房间现货库存:QQ:373621633 |
||||
FUJI |
2021+ |
NA |
6800 |
原厂原装,欢迎咨询 |
|||
SUMITOM |
24+ |
VQFN |
7850 |
只做原装正品现货或订货假一赔十! |
|||
FUJITSU |
23+ |
高频管 |
750 |
专营高频管模块,全新原装! |
|||
原厂 |
23+ |
高频管 |
5000 |
原装正品,假一罚十 |
FLL107ME 资料下载更多...
FLL107ME 芯片相关型号
- FLD5F15CX-H9160
- FLD5F15CX-H9260
- FLD5F15CX-H9270
- FLD5F15CX-H9320
- FLD5F15CX-H9370
- FLD5F15CX-L8690
- FLD5F15CX-L8900
- FLD5F20CE-E9310
- FLD5F20CE-E9335
- FLD5F20CE-E9355
- FLD5F20CE-E9370
- FLD5F20CE-E9375
- FLD5F20NP-D41
- FLD5F20NP-E32
- FLL120MK
- FLL21E090IK
- FLL310IQ-3A
- GB-IR333A31BT
- IR333
- MX29GL033MBMC-10R
- MX29GL033MBMI-90Q
- MX29GL065MTTI-90Q
- MX29LV065MTTI-90Q
- MX29VL033MTMC-10R
- MX29VL320MTTC-10R
- PIC18LF248ELQTP
- PIC18LF248ISOQTP
- PIC18LF258TEPTQTP
- PIC18LF448ILQTP
- PIC18LF458TEPTQTP
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
Eudyna Devices Inc
Eudyna Devices Inc. 是一家曾经存在的半导体公司,总部位于日本东京。该公司成立于1988年,专注于射频(RF)和微波半导体器件的研发和生产,主要用于通信和无线网络应用。其产品包括功率放大器、混频器、变频器、遥控振荡器等,广泛应用于移动通信、卫星通信、雷达和无线局域网等领域。 2009年,Eudyna Devices Inc.被Fujitsu Limited的子公司Fujitsu Semiconductor Limited收购,随后被整合到Fujitsu Semiconductor旗下。这个收购使得Eudyna Devices Inc. 的产品线和技术得到了更广泛的应用。虽然E