[TRANSCOM]

DESCRIPTION

The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100 DC tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercial applications including Cellular/PCS systems, and military high performance power amplifier.

FEATURES

• 1W Typical Output Power at 6 GHz

• 11dB Typical Power Gain at 6 GHz

• High Linearity:

IP3 = 40 dBm Typical at 6 GHz

• High Power Added Efficiency:

PAE ≥ 43 for Class A Operation

• Suitable for High Reliability Application

• Breakdown Voltage:

BVDGO ≥ 15 V

• Lg = 0.35 µm, Wg = 2.4 mm

• 100 DC Tested

• Low Cost Ceramic Package