[TELEFUNKEN electronic]

Construction : Emitter: GaAs IR Emitting Diode

Detector: Silicon NPN Epitaxial Planar Phototransistor

Applications: Gaivanically separated circuits, non-interaction switches

Features:

● DC isolation test voltage Vis 4.4 kV

● Low coupling capacity CK typ. 0.3 pF

● Test class 25/100.21, DIN 40045

● Current transfer ratio in groups selected

● Low temperature coefficient of CTR