[GSI]

Functional Description

Applications

The GS820E32 is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support.

Features

• FT pin for user configurable flow through or pipelined operation.

• Dual Cycle Deselect (DCD) Operation.

• 3.3V +10/-5 Core power supply

• 2.5V or 3.3V I/O supply.

• LBO pin for linear or interleaved burst mode.

• Internal input resistors on mode pins allow floating mode pins.

• Default to Interleaved Pipelined Mode.

• Byte write (BW) and/or global write (GW) operation.

• Common data inputs and data outputs.

• Clock Control, registered, address, data, and control.

• Internal Self-Timed Write cycle.

• Automatic power-down for portable applications.

• JEDEC standard 100-lead TQFP or QFP package.