[Stanford-Microdevices]

Product Description

Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-8343 is optimized for 3V operation but can be biased at 2V for low-voltage battery operated systems. The device is easily matched as ΓOPT is very close to 50 ohms. This device provides high gain, low NF, and excellent linearity at a low cost.

Product Features

• 6 GHz Useful Bandwidth

• Low FMIN: 0.9 dB @ 0.9 GHz

1.1 dB @ 1.9 GHz

• High Gain (Gmax): 24 dB @ 0.9 GHz

19 dB @ 1.9 GHz

• Easily Matched with |ΓOPT| = 0.17 @ 1.9 GHz

• OIP3 = +28.5 dBm, P1dB = +13 dBm

• Low Cost High Performance SiGe HBT

Applications

• LNA for Wireless Infrastructure

• Fixed Wireless Infrastructure

• Wireless Data

• Driver Stage for Low Power Applications

• Oscillators