Features

 60V, 120A,Rds(on)(typ)=6.5mΩ@Vgs=10V

 HighRuggedness

 Fast Switching

 100 Avalanche Tested

 Improved dv/dt Capability

Description

This Power MOSFET is produced using Si-Tech’s advanced

Trench MOS Technology. This latest technology has been

especially designed to minimize on-state resistance, have a

high rugged avalanche characteristics.These devices are well

suited for low voltage application such as automotive,DC/DC

converters,and high efficiency switch for power management

in portable and battery products.