[Directed-Energy]

The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.

♦ Common Source Push-Pull Pair

♦ N-Channel Enhancement Mode

♦ Low Qg and Rg

♦ High dv/dt

♦ Nanosecond Switching

Features

• Isolated Substrate

− high isolation voltage (>2500V)

− excellent thermal transfer

− Increased temperature and power cycling capability

• IXYS advanced low Qg process

• Low gate charge and capacitances

− easier to drive

− faster switching

• Low RDS(on)

• Very low insertion inductance (<2nH)

• No beryllium oxide (BeO) or other hazardous materials

Advantages

• High Performance Push-Pull RF Package

• Optimized for RF and high speed switching at frequencies to >100MHz

• Easy to mount—no insulators needed

• High power density