位置:BS616LV1623 > BS616LV1623详情

BS616LV1623中文资料

厂家型号

BS616LV1623

文件大小

256.89Kbytes

页面数量

10

功能描述

Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

数据手册

下载地址一下载地址二

简称

ETC

生产厂商

List of Unclassifed Manufacturers

中文名称

未分类制造商官网

BS616LV1623数据手册规格书PDF详情

[BSI]

DESCRIPTION

The BS616LV1623 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,676 words by 16 bits or 2,097,152 bytes by 8 bits selectable by CIO pin and operates in a Vcc range of 2.7V to 3.6V supply voltage.

FEATURES

• Vcc operation voltage : 2.7 ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade: 45mA (@55ns) operating current

I -grade: 46mA (@55ns) operating current

C-grade: 36mA (@70ns) operating current

I -grade: 37mA (@70ns) operating current

3.0uA (Typ.) CMOS standby current

• High speed access time :

-55 55ns

-70 70ns

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE1, CE2 and OE options

• I/O Configuration x8/x16 selectable by CIO, LB and UB pin

BS616LV1623产品属性

  • 类型

    描述

  • 型号

    BS616LV1623

  • 功能描述

    Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable

更新时间:2025-10-12 9:08:00
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