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ATO25F512B-30EW中文资料

厂家型号

ATO25F512B-30EW

文件大小

1281.87Kbytes

页面数量

46

功能描述

3.3V 1G-BIT Serial NAND Flash Memory with Quad SPI

数据手册

下载地址一下载地址二

简称

ETC

生产厂商

List of Unclassifed Manufacturers

中文名称

未分类制造商官网

ATO25F512B-30EW数据手册规格书PDF详情

FEATURES

GENERAL

Serial Peripheral Interface

 Mode 0 and Mode 3

Standard, Quad SPI

 Standard SPI : SCLK, CS#, SI, SO

 Quad SPI : SCLK, CS#, SIO0, SIO1,

SIO2/W#, SIO3/Hold#

Single power supply operation

 Full voltage range: 2.7V to 3.6V read, erase and program operations

Organization

 Memory Cell Array : (128M + 4M) x Bytes

 Data Register : (2048 + 64) x Bytes

Automatic Program and Erase

 Page Program : (2048 + 64) x Bytes

 Block Erase : (128K + 4K) x Bytes = 64pages

Page Read Operation

 Page Size : (2048 + 64) Bytes

 Page Read(cell array to page buffer) : 25us(Max.)

 Serial Page Access : 104MHz, 133MHz(CL=15pF)

Fast Write Cycle Time

 Program time : 200us(Typ.)

 Block Erase time : 2ms(Typ.)

Electronic Identification

 JEDEC standard 1-byte manufacturer ID and 1-byte device ID.

Copy-Back PROGRAM Operation

 Fast Page copy without external buffering

Security features

 OTP area, 16K bytes(8 pages)

Hardware Data Protection

 Program / Erase locked during Power transitions.

 W# pin works in conjunction with Status Register Bits to protect specified memory areas. Status Register Block Protection bits (BP2, BP1, BP0) in status register configure parts of memory as read-only

Data Integrity

 Endurance:100K Program/Erase Cycles

 Data Retention : 10 years

Error Management

 Internal ECC code generation

 1bit/528byte ECC, 1NOP/528byte

Package

 8-pad 8x6 WSON

 16-pin SOIC 300 mil

更新时间:2026-7-22 13:00:00
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TI/德州仪器
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2025+
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