FEATURES

 Voltage Supply: 1.8V (1.7 V ~ 1.95V)

 Organization

x8:

- Memory Cell Array: (128M + 4M) x 8bit

- Data Register: (2K + 64) x 8bit

x16:

- Memory Cell Array: (64M + 2M) x 16bit

- Data Register: (1K + 32) x 16bit

 Automatic Program and Erase

x8:

- Page Program: (2K + 64) Byte

- Block Erase: (128K + 4K) Byte

x16:

- Page Program: (1K + 32) Word

- Block Erase: (64K + 2K) Word

 Page Read Operation

x8

- Page Size: (2K + 64) Byte (x8)

- Random Read: 25us (Max.)

- Serial Access: 45ns (Min.)

x16

-Page Size: (1K + 32) Word (x16)

 Memory Cell: 1bit/Memory Cell

 Fast Write Cycle Time

x8

- Program time: 300us (Typ.)

- Block Erase time: 4ms (Typ.)

 Command/Address/Data Multiplexed I/O Port

 Hardware Data Protection

- Program/Erase Lockout During Power Transitions

 Reliable CMOS Floating Gate Technology

- ECC Requirement: x8 - 4bit/512Byte,

x16 - 4bit/256Word

- Endurance: 100K Program/Erase Cycles

- Data Retention: 10 Years

 Command Register Operation

 Automatic Page 0 Read at Power-Up Option

- Boot from NAND support

- Automatic Memory Download

 NOP: 4 cycles

 Cache Program/Read Operation for High Performance

Program

 Cache Read Operation

 Copy-Back Operation

 EDO mode

 Bad-Block-Protect

 One Time Program (OTP) Operation