位置:F50D2G41XA-104YG2B > F50D2G41XA-104YG2B详情

F50D2G41XA-104YG2B中文资料

厂家型号

F50D2G41XA-104YG2B

文件大小

1677.68Kbytes

页面数量

51

功能描述

1.8V 2 Gbit SPI-NAND Flash Memory

数据手册

下载地址一下载地址二

简称

ESMT晶豪科技

生产厂商

Elite Semiconductor Memory Technology Inc.

中文名称

晶豪科技股份有限公司官网

F50D2G41XA-104YG2B数据手册规格书PDF详情

FEATURES

 Single-level cell (SLC) technology

 Organization

- Page size x1: 2176 bytes (2048 + 128 bytes)

- Block size: 64 pages (128K + 8K bytes)

- Device size: 2Gb (2 planes, 1024 blocks per plane)

 Standard and extended SPI-compatible serial bus

interface

- Instruction, address on 1 pin; data out on 1, 2, or 4 pins

- Instruction on 1 pin; address, data out on 2 or 4 pins

- Instruction, address on 1 pin; data in on 1 or 4 pins

 User-selectable internal ECC supported

- 8 bits/512 bytes

 Array performance

- 104 MHz clock frequency (MAX)

- Page read: 30μs (MAX) with on-die ECC disabled; 80μs

(MAX) with on-die ECC enabled

- Page program: 200μs (TYP) with on-die ECC disabled;

220μs (TYP) with on-die ECC enabled

- Block erase: 2ms (TYP)

 Advanced features

- Read page cache mode

- Read unique ID

- Read parameter page

 Device initialization

- Automatic device initialization after power-up

 Security

- Block 0 is valid when shipped from factory

with ECC enabled

- Software write protection with lock register

- Hardware write protection to freeze BP bits

- Lock tight to freeze BP bits during one power cycle

instead of WP#

 Permanent block lock protection

- OTP Space: 10 pages one-time programmable

NAND Flash memory area

 Operating voltage range

- VCC = 1.7–1.95V

 Operating temperature

- Commercial: 0°C to +70°C

 Quality and reliability

- Endurance: 100,000 PROGRAM/ERASE cycles

- Data retention: JESD47H-compliant;

see qualification report

- Additional: Uncycled data retention: 10 years 24/7 @ 70°C

更新时间:2025-6-14 14:06:00
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ESMT
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100500
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ROHS+ Original 元件 FLAH
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ESMT半导体 元件 IC电子元件更多数量咨询
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代理渠道/只做原装/可含税