Description

The 20195 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• Class AB Characteristics

• 26 Volt, 900 MHz Characteristics

- Output Power = 150 Watts Min

- Collector Efficiency = 50 Min at 150 Watts

- Gain = 9 dB Typ

• Gold Metallization

• Silicon Nitride Passivated