Description

The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100 lot traceability is standard.

• 60 Watts, 1.8–1.9 GHz

• Class AB Characteristics

• Gold Metallization

• Silicon Nitride Passivated