Description:

Model SBP-6531141513-1010-E1 is a GaN based high power amplifier with a typical small signal gain of 15 dB and a nominal P1dB of +13 dBm across the frequency range of 65 to 110 GHz. The DC power requirement for the amplifier is +10 VDC/480 mA. The mechanical configuration offers an in line structure with WR-10 waveguides and UG-387/U-M anti-cocking flanges. Other port configurations, such as with 1 mm connectors or a right angle structure with WR-10 waveguides, are also available under different model numbers.

Features:

•High Output Power

•High Power Added Efficiency (PAE)

Applications:

•Test Instrumentation

•Communication Systems

•Radar Systems