The ePowerTM Stage IC Product Family integrates input logic interface, level shifting, bootstrap charging and gate drive buffer circuits along with eGaN output FETs. Integration is implemented using EPC’s proprietary GaN IC technology. The end result is a Power Stage IC that translates logic level input to high voltage and high current power output that is smaller in size, easier to manufacture, simpler to design and more efficient to operate.

Features

• Integrated high side and low side eGaN® FET with

internal gate driver and level shifter

• 5 V external bias supply

• 3.3 V or 5 V CMOS input logic levels

• Independent high side and low side control inputs

• Logic lockout commands both FETs off when inputs

are both high at same time

• External resistors to tune SW switching times and

over-voltage spikes above rail and below ground

• Robust level shifter operating for hard and soft

switching conditions

• False trigger immunity from fast switching transients

• Synchronous charging for high side bootstrap supply

• Disable input engages low quiescent current mode

from VDRV supply

• Power on reset for low side VDD supply

• Undervoltage lockout for high side VBOOT supply

• Active gate pull-down for HS FET and LS FET with loss

of VDRV supply

• Thermally enhanced QFN package with exposed top

for low thermal resistance from junction to top-side heatsink