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H25S80中文资料

厂家型号

H25S80

文件大小

604.77Kbytes

页面数量

37

功能描述

8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

数据手册

下载地址一下载地址二

生产厂商

EON

H25S80数据手册规格书PDF详情

GENERAL DESCRIPTION

The EN25S80 is an 8 Megabit (1024K-byte) Serial Flash memory, with advanced write protection

mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.

The EN25S80 is designed to allow either single Sector/Blockat a time or full chip erase operation. TheEN25S80 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector or block.

FEATURES

• Single power supply operation

- Full voltage range: 1.65-1.95 volt

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• 8 M-bit Serial Flash

- 8 M-bit/1024 K-byte/4096 pages

- 256 bytes per programmable page

• High performance

- 75MHz clock rate

• Low power consumption

- 7 mA typical active current

- 1 μA typical power down current

• Uniform Sector Architecture:

- 256 sectors of 4-Kbyte

- 16 blocks of 64-Kbyte

- Any sector or block can be erased individually

• Software and Hardware Write Protection:

- Write Protect all or portion of memory via software

- Enable/Disable protection with WP# pin

• High performance program/erase speed

- Page program time: 1.5ms typical - Sector erase time: 90ms typical

- Block erase time 500ms typical

- Chip erase time: 8 seconds typical

• Lockable 256 byte OTP security sector

• Minimum 100K endurance cycle

• Package Options

- 8 pins SOP 150mil body width - 8 pins VSOP 200mil body width

- 8 contact VDFN

- All Pb-free packages are RoHS compliant

• Industrial temperature Range

更新时间:2025-12-3 11:52:00
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