位置:PD488588FF-C80-40-DH1 > PD488588FF-C80-40-DH1详情

PD488588FF-C80-40-DH1中文资料

厂家型号

PD488588FF-C80-40-DH1

文件大小

1074.2Kbytes

页面数量

79

功能描述

288M bits Direct Rambus DRAM for High Performance Solution

数据手册

下载地址一下载地址二到原厂下载

生产厂商

Elpida Memory

简称

ELPIDA美光科技

中文名称

美光科技股份有限公司官网

LOGO

PD488588FF-C80-40-DH1数据手册规格书PDF详情

Description

The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.

The µPD488588 is 288Mbits Direct Rambus DRAM (RDRAM), organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz to 800MHz transfer rates while using conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 1.25ns per two bytes (10ns per sixteen bytes).

The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95 bus efficiency. The Direct RDRAM’s four banks support up to four simultaneous transactions.

System oriented features for mobile, graphics and large memory systems include power management, byte masking.

The µPD488588 is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAMs operate from a 2.5V supply.

Features

• Highest sustained bandwidth per DRAM device

— 1.6 GB/s sustained data transfer rate

— Separate control and data buses for maximized

efficiency

— Separate row and column control buses for easy

scheduling and highest performance

— 32 banks: four transactions can take place

simultaneously at full bandwidth data rates

• Low latency features

— Write buffer to reduce read latency

— 3 precharge mechanisms for controller flexibility

— Interleaved transactions

• Advanced power management:

— Multiple low power states allows flexibility in power

consumption versus time to active state

— Power-down self-refresh

• Overdrive current mode

• Organization: 2K bytes pages and 32 banks, x 18

• Uses Rambus Signaling Level (RSL) for up to 800MHz operation

• Package : 80-ball FBGA (µBGA) (17.16 × 10.2)

PD488588FF-C80-40-DH1产品属性

  • 类型

    描述

  • 型号

    PD488588FF-C80-40-DH1

  • 制造商

    ELPIDA

  • 制造商全称

    Elpida Memory

  • 功能描述

    288M bits Direct Rambus DRAM for High Performance Solution

更新时间:2025-5-16 16:33:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ELPIDA
23+
NA
39960
只做进口原装,终端工厂免费送样
PIONEER
16+
QFP
2500
进口原装现货/价格优势!
PIONEER
23+
BGAQFP
8659
原装公司现货!原装正品价格优势.
PIONEER
25+
QFP
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
原厂原装
2023+环保现货
MSOP8
50000
专注军工、汽车、医疗、工业等方案配套一站式服务
Rotron
1
公司优势库存 热卖中!!
SHARP
13+
DIP-2
35508
原装分销
SHARP原装
25+23+
DIP-2
29059
绝对原装正品全新进口深圳现货
SHARP
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
SHARP/夏普
24+
DIP-2
880000
明嘉莱只做原装正品现货

ELPIDA相关电路图

  • EMC
  • EMCORE
  • EMERSON-NETWORKPOWER
  • EMKA
  • EMLSI
  • EMMICRO
  • EMP-CENTAURI
  • EMPIA
  • ENERCON
  • ENERGIZER
  • EnOcean
  • ENPHASE

Elpida Memory 美光科技股份有限公司

中文资料: 2978条

Elpida Memory公司是一家领先的动态随机存取存储器(DRAM)集成电路制造商‌,总部位于日本,并在全球范围内拥有先进的制造设施和技术专长‌。 Elpida Memory公司成立于2000年,最初是日本唯一一家生产电脑等动态随机存取存储器(DRAM)的企业。公司在2004年于东京证券交易所主板上市。然而,由于2008年金融危机的冲击,公司业绩急剧恶化。最终,公司在2012年申请破产保护,并在2013年被美光(Micron)收购合并‌。 Elpida Memory公司在技术上具有世界级的专长,其产品特点包括高密度、高速、低功耗和小型封装。公司通过其Hiroshima Plant和台湾合资