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MC-4532CC727PF-A75中文资料
MC-4532CC727PF-A75数据手册规格书PDF详情
Description
The MC-4532CC727EF, MC-4532CC727PF and MC-4532CC727XF are 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128M SDRAM: µPD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surfacemounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
• 33,554,432 words by 72 bits organization (ECC type)
• Clock frequency and access time from CLK.
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
• Pulsed interface
• Possible to assert random column address in every cycle
• Quad internal banks controlled by BA0 and BA1 (Bank Select)
• Programmable burst-length (1, 2, 4, 8 and full page)
• Programmable wrap sequence (Sequential / Interleave)
• Programmable /CAS latency (2, 3)
• Automatic precharge and controlled precharge
• CBR (Auto) refresh and self refresh
• All DQs have 10 Ω ±10 of series resistor
• Single 3.3 V ± 0.3 V power supply
• LVTTL compatible
• 4,096 refresh cycles/64 ms
• Burst termination by Burst Stop command and Precharge command
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)
• Unbuffered type
• Serial PD
MC-4532CC727PF-A75产品属性
- 类型
描述
- 型号
MC-4532CC727PF-A75
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ELPIDA |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
|||
NEC |
23+ |
NA |
3500 |
全新原装假一赔十 |
|||
NEC |
23+ |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
NEC |
23+ |
NA |
117 |
专做原装正品,假一罚百! |
|||
MOT |
2019 |
原厂原装 |
1275 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
MOT |
24+ |
原厂原装 |
11000 |
原装正品 有挂有货 假一赔十 |
|||
24+ |
2000 |
真实现货库存 |
|||||
2023+ |
DIP |
3000 |
进口原装现货 |
||||
MOTOROLA/摩托罗拉 |
24+ |
DIP |
39000 |
只做原装进口现货 |
|||
UTC |
24+ |
SOP-8TR |
5000 |
只做原装公司现货 |
MC-4532CC727PF-A75 资料下载更多...
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Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
Elpida Memory 美光科技股份有限公司
Elpida Memory公司是一家领先的动态随机存取存储器(DRAM)集成电路制造商,总部位于日本,并在全球范围内拥有先进的制造设施和技术专长。 Elpida Memory公司成立于2000年,最初是日本唯一一家生产电脑等动态随机存取存储器(DRAM)的企业。公司在2004年于东京证券交易所主板上市。然而,由于2008年金融危机的冲击,公司业绩急剧恶化。最终,公司在2012年申请破产保护,并在2013年被美光(Micron)收购合并。 Elpida Memory公司在技术上具有世界级的专长,其产品特点包括高密度、高速、低功耗和小型封装。公司通过其Hiroshima Plant和台湾合资