位置:EBE21AD4AGFA-5C-E > EBE21AD4AGFA-5C-E详情
EBE21AD4AGFA-5C-E中文资料
EBE21AD4AGFA-5C-E数据手册规格书PDF详情
Features
• Double-data-rate architecture; two data transfers per clock cycle
• The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture
• Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver
• DQS is edge-aligned with data for READs; centeraligned with data for WRITEs
• Differential clock inputs (CK and /CK)
• DLL aligns DQ and DQS transitions with CK transitions
• Commands entered on each positive CK edge; data referenced to both edges of DQS
• Posted /CAS by programmable additive latency for better command and data bus efficiency
• Off-Chip-Driver Impedance Adjustment and On-Die-Termination for better signal quality
• /DQS can be disabled for single-ended Data Strobe operation
• 1 piece of PLL clock driver, 4 pieces of register driver and 1 piece of serial EEPROM (2K bits EEPROM) for Presence Detect (PD)
EBE21AD4AGFA-5C-E产品属性
- 类型
描述
- 型号
EBE21AD4AGFA-5C-E
- 制造商
ELPIDA
- 制造商全称
Elpida Memory
- 功能描述
2GB Registered DDR2 SDRAM DIMM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ELPIDA |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
EBE21AD4AGFA-5C-E 资料下载更多...
EBE21AD4AGFA-5C-E 芯片相关型号
- 2SA1576A
- 2SA812
- 2SD313
- B0530N
- DTA12-Y
- DTA18-Y
- DTAF1205-Y
- EBE10AD4AGFA-5C-E
- EBE10EE8ACFA
- EBE11ED8AJWA-6E-E
- EBE11FD8AGFN-5C-E
- EBE20AE4ABFA-6E-E
- EBE20RE4ACFA
- EBE21AD4AGFB
- EBE21AD4AGFB-5C-E
- EBE21EE8ACFA-8E-E
- EBE21FD4AGFN
- EBE21UE8AADA-4A-E
- EBE21UE8ACSA-6E-E
- EBE41RE4ABHA-5C-E
- EBE41RE4ACFA-4A-E
- EBE51ED8AJWA-6E-E
- EDD5116AFTA-TI
- ELM33403CA-S
- ELM33411CA-S
- ELM34414AA-S
- ELM34415AA-S
- HB52D88GB-A6F
- MC-45D16DA721KFA-C75
- MC-45D32DA721KFA-C75
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
Elpida Memory 美光科技股份有限公司
Micron began in 1978 as a four-person semiconductor design company in the basement of a Boise, Idaho, dental office. By 1980 we had broken ground on our first fabrication plant, and then just a few years later we introduced the world’s smallest 256K DRAM. In 1994, we earned a spot on the Fortun