Description:

N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the HF and VHF bands. The transistor presents excellent performance as a linear amplifier in the HF band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups.

Features:

SOT121B package. The transistor has a 1/2 flange envelope with a ceramic cap. All leads are isolated from the flange.