2W具有静音功能的立体声音频放大器

EUA5202是立体声音频功率放大器。它能在每个信息通道中将2W连续的RMS功率传送至3Ω负载中。当传送1W至8Ω扬声器时，EUA5202的失真度(THD+N)将小于0.04%。 •负载为3Ω时\n- VDD=5V 时, 2W/通道\n- 3V时, 800mW/通道\n•内含Depop电路\n•低静态电流和关断电流\n•静音和关闭控制功能\n•热关闭保护\n•立体输入MUX\n•BTL或SE模式\n•含散热垫TSSOP-24封装\n•符合RoHS规范及Pb-Free;

2-W Stereo Audio Power Amplifier with Mute

文件：680.91 Kbytes Page：23 Pages

2-W Stereo Audio Power Amplifier with Mute

文件：680.91 Kbytes Page：23 Pages

2-W Stereo Audio Power Amplifier with Mute

文件：680.91 Kbytes Page：23 Pages

2-W Stereo Audio Power Amplifier with Mute

文件：680.91 Kbytes Page：23 Pages

2-W Stereo Audio Power Amplifier with Mute

文件：680.91 Kbytes Page：23 Pages

1.55 關m Edge-Emitting LED DIP Module

GENERAL DESCRIPTION The OE5202G is a 1.55 μm, edge-emitting LED DIP module with a single-mode fiber pigtail. The high coupling efficiency of the OKI EE-LED yields a single-mode fiber output of over 20 μW. The module is an optimal light source for optical LAN systems and measuring instruments.

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

ROMless 8-bit microcontroller

DESCRIPTION The OM5202 8-Bit ROMless Microcontroller is manufactured in an advanced CMOS process and is a derivative of the 80C51 microcontroller family. The OM5202 has the same instruction set as the 80C51. FEATURES • 80C51 central processing unit • no internal ROM, externally up to 64k bytes

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package

Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features