OVP &负载开关二合一IC

ET9630L integrated OVP switch1 and load switch2.\n The OVP switch1 can disconnect the systems from its output pin(Vo) in case wrong input operating\n conditions are detected. The system is positive overvoltage protected up to 28V.\n The load switch2 can disconnect the systems from its outpu OVP switch1\r\n\r\n● VBUS operating Range: 2.4V to 28V\r\n\r\n● Absolute maximum voltage of VBUS: 30V\r\n\r\n● Low RDS(on): 30mΩ typ at VBUS=5V/0.3A\r\n\r\n● 3A Maximum Continuous Current Capability\r\n\r\n● Overvoltage Lockout : OVLO=5.95V (typ)\r\n\r\n● Short Protection for Vo\r\n\r\n● Surge immun;

Low Distortion 750 MHz Closed-Loop Buffer Amp

GENERAL DESCRIPTION The AD9630 is a monolithic buffer amplifier that utilizes a patented, innovative, closed-loop design technique to achieve exceptional gain accuracy, wide bandwidth, and low distortion. Slew rate limiting has been overcome as indicated by the 1200 V/µs slew rate; this improveme

Low Distortion 750 MHz Closed-Loop Buffer Amp

GENERAL DESCRIPTION The AD9630 is a monolithic buffer amplifier that utilizes a patented, innovative, closed-loop design technique to achieve exceptional gain accuracy, wide bandwidth, and low distortion. Slew rate limiting has been overcome as indicated by the 1200 V/µs slew rate; this improveme

Low Distortion 750 MHz Closed-Loop Buffer Amp

GENERAL DESCRIPTION The AD9630 is a monolithic buffer amplifier that utilizes a patented, innovative, closed-loop design technique to achieve exceptional gain accuracy, wide bandwidth, and low distortion. Slew rate limiting has been overcome as indicated by the 1200 V/µs slew rate; this improveme

Low Distortion 750 MHz Closed-Loop Buffer Amp

GENERAL DESCRIPTION The AD9630 is a monolithic buffer amplifier that utilizes a patented, innovative, closed-loop design technique to achieve exceptional gain accuracy, wide bandwidth, and low distortion. Slew rate limiting has been overcome as indicated by the 1200 V/µs slew rate; this improveme

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)