100V 三相栅极驱动器

一款专门用于MOSFET和IGBT驱动的三相栅极驱动器，特别适合于电池供电的马达驱动，比如电动工具，电动平衡车等。\n内部集成了高低侧欠压锁定（UVLO）电路，死区时间以及防止功率器件直通短路功能。\n\n\n功能特性：\n集成三相半桥驱动器\n内置死区时间以及防直通短路保护\n高低侧欠压锁定保护（UVLO）\n浮动电压极限：100V\n工作电压：6.5V~18V\n内置5V LDO稳压器和4V偏置电压\n驱动输出能力IO+/IO-: +1.2A/-2.0A @ VCC=15V, VBS=15\n温度范围：-40℃~125℃

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

文件：126.55 Kbytes Page：4 Pages

Reference Diode

文件：126.55 Kbytes Page：4 Pages