ESD Protection Diode, Single Channel

ON Semiconductor’s ESD6116 is an Application Specific Integrated Passive™ (ASIP™) component in a 2 x 2, 4−bump, 0.4 mm pitch, SP form factor. This device is designed for:Transient Voltage SuppressionElectrostatic Discharge ProtectionElectrical Overstress Protection

封装/外壳：4-UFBGA，WLCSP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 20VC 4WLCSP 电路保护 TVS - 二极管

Single-Channel Transient Voltage Suppressor

文件：135.23 Kbytes Page：4 Pages

CMOS STATIC RAM 16K (2K x 8 BIT)

DESCRIPTION: The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDTs high-performance, high-reliability CMOS technology. FEATURES: • High-speed access and chip select times — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commerc

Industrial Rectifier, 2200 Amp

Features: ● High Voltage ● High Surge Current ● Diffused Junction Applications: ● Converters ● Power Supplies ● High Power Drives ● Auxilliary System Supplies for Traction

1.2GHz PRESCALER

1.2GHz PRESCALER

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For digital circuits ■ Features ● Costs can be reduced through downsizing of the equipment and reduction of the number of parts. ● MT-1 type package, allowing supply with the radial taping.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For switching/digital circuits ■ Features ● Two elements incorporated into one package. (Transistors with built-in resistor) ● Reduction of the mounting area and assembly cost by one half. ■ Basic Part Number of Element ● UN1116 × 2 elements