ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low le

丝印代码：P8；ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low le

丝印代码：P7；ESD601-Q1 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low le

1-Line Bi-directional TVS Diode

Features ® Low operating voltage: + 18V @ Ultra low capacitance:0.3pF typical © Ultra low leakage: nA level ® Low operating voltage: ® Low clamping voltage ® 2-pin leadless package ® Complies with following standards: ® — IEC 61000-4-2 (ESD) immunity test Air discharge: £2

ESD601 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low le

ESD601-Q1 Low Capacitance ESD Diode for RF and ADAS Signal Protection

1 Features • IEC 61000-4-2 ESD Protection: – ±15kV contact discharge – ±15kV air gap discharge • ISO 10605 (330pF, 330Ω) ESD Protection: – ±12kV contact discharge – ±12kV air-gap discharge • IEC 61000-4-5 surge protection: – 2.7A (8/20μs) • I/O capacitance: 0.3pF (typical) • Ultra low le

VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A

VOLTAGE 50 to 1000 Volts CURRENT - P.C. MTG 3A , HEAT-SINK MTG 6A FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. • Surge Overload Ratings to 125 Amperes. • Low forward voltage, and reverse leakage. • Small size , simple installation.

Silicon Varistor Temperature Compensating Diode

Features: ● High reliability planar chip and glass sealing ● Low IR ● Large PD

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction in P600 package ● 6 ampere operation at TA=60 ¢J with no thermal runaway ● Exce

FAST SWITCHING RECOVERY RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

FEATURES ● Low cost ● Diffused junction ● Low forward voltage drop ● High current capability Fast switching for high efficiency ● The plastic meterial carries U/L recognition 94V-O ● Exceeds environmental standards of MIL-S-19500/228

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 6.0 Amperes FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Void-free Plastic in P600 package ● 6.0 ampere operation at TA=55 ¢J with no thermal runaway ● Ex