ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

丝印代码：DE；1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

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封装/外壳：0402（1006 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 3.6VWM 6.5VC 2X1SON 电路保护 TVS - 二极管

ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

ESD351 1-Channel 30 kV ESD Protection Diode with Low Clamping Voltage in 0402 Package

1 Features 1• IEC 61000-4-2 Level 4 ESD Protection – ±30-kV Contact Discharge – ±30-kV Air Gap Discharge • IEC 61000-4-4 EFT Protection – 80 A (5/50 ns) • IEC 61000-4-5 Surge Protection – 6 A (8/20 μs) • IO Capacitance: 1.8 pF (Typical) • DC Breakdown Voltage: 4.5 V (Minimum) • Low Leaka

WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIER

DESCRIPTION These circuits are high speed J–FET input single operational amplifiers incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates,low input bias and offset currents, and low offset voltage temperatur

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

FAMILY OF JFET OPERATIONAL AMPLIFIERS

JFET Input Operational Amplifiers These low cost JFET input operational amplifiers combine two state–of–the–art analog technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input offset vo

Silicon NPN Transistor RF Power Amp, Driver

Description: The NTE351 is a silicon NPN transistor in a T72H type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial equipment to 300MHz. Features: ● Specified 12.5V, 175MHz Characteristics: Output Power = 25W Minimum

Square Type

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