ESD341 1-Channel 짹 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30-kV contact discharge – 30-kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.6 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100-nA (maximum) • Low ESD c

ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30 kV contact discharge – 30 kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.66 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100 nA (maximum) • Low ESD

ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30 kV contact discharge – 30 kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.66 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100 nA (maximum) • Low ESD

采用 0201 封装且具有 5.4A 浪涌额定值的 0.3pF、3.3V ±30kV ESD 保护二极管

• IEC 61000-4-2 level 4 ESD protection \n• 30-kV air gap discharge\n• IEC 61000-4-5 surge protection \n• IO capacitance: \n• DC breakdown voltage: ±6.2 V (typical)\n• Low ESD clamping voltage: ± 10.2 V at 16 A TLP\n• Supports high speed interfaces up to 3.4 Gbps\n• Space-saving industry standard 020;

ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30 kV contact discharge – 30 kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.66 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100 nA (maximum) • Low ESD

ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30 kV contact discharge – 30 kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.66 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100 nA (maximum) • Low ESD

ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30 kV contact discharge – 30 kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.66 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100 nA (maximum) • Low ESD

ESD341 1-Channel ± 30 kV ESD Protection Diode in 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – 30 kV contact discharge – 30 kV air gap discharge • IEC 61000-4-5 surge protection – 5.4 A (8/20 μs) • IO capacitance: – 0.66 pF (typical) • DC breakdown voltage: ±6.2 V (typical) • Ultra low leakage current: 100 nA (maximum) • Low ESD

0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

3-Terminal Positive Voltage Regulators

文件：310.99 Kbytes Page：11 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages