SUPERFAST RECOVERY RECTIFIER

Features Low profile space Ideal for automated placement Glass passivated chip junctions Low forward voltage drop High forward surge capability High temperature soldering: 260 ℃ /10 seconds in terminals

1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Super-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

1A 300V Fast recovery diode

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SMALL SURFACE MOUNT ULTRA FAST DIODES

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SMALL SURFACE MOUNT ULTRA FAST DIODES

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1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE

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Ultra Fast Recovery Rectifier 

快恢复二极管

（超）快恢复二极管

1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Super-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 10 Amperes FEATURES • For surface mounted applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classi

Integrated Circuit FM/AM IF Amplifier

Description: The NTE1003 monolithic integrated circuit is a high grade FM/AM intermediate frequency amplifier in a 14–Lead DIP type package composed of four individual amplifiers and a voltage regulator. Features: ● Composed of Four Individual Amplifiers ● Low Power Consumption ● High Gain ●

Photo Interrupter

Photo Interrupter For contactless SW, object detection Outline ON1003 is an ultraminiature, highly reliable transmittive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30