SUPERFAST RECOVERY RECTIFIER

Features Low profile space Ideal for automated placement Glass passivated chip junctions Low forward voltage drop High forward surge capability High temperature soldering: 260 ℃ /10 seconds in terminals

SMALL SURFACE MOUNT ULTRAFAST DIODES

VOLTAGE 100 to 600 Volts CURRENT 1.0 Amperes FEATURES • For surface mounted applications • Low profile package • Ideal for automated placement • Glass Passivated • High temperature soldering : 260°C / 10 seconds at terminals • In compliance with EU RoHS 2002/95/EC directives

1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Super-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

丝印代码：E1D；SUPER FAST RECTIFIERS

FEATURES • For surface mounted applications in order to optimize board space • Ideal for automated placement • Glass passivated • High temperature soldering : 260 oC / 10 seconds at terminals • Lead free in ccompliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC

1A 200V Fast recovery diode

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SMALL SURFACE MOUNT ULTRA FAST DIODES

文件：327.23 Kbytes Page：2 Pages

SMALL SURFACE MOUNT ULTRA FAST DIODES

文件：325.03 Kbytes Page：2 Pages

SMALL SURFACE MOUNT SUPER FAST DIODES

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快恢复二极管

（超）快恢复二极管

超快恢复二极管

1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE

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1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Super-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

封装/外壳：SOD-123F 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：SOD-123FL, SUPER 分立半导体产品 二极管 - 整流器 - 单

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp