SUPERFAST RECOVERY RECTIFIER

Features Low profile space Ideal for automated placement Glass passivated chip junctions Low forward voltage drop High forward surge capability High temperature soldering: 260 ℃ /10 seconds in terminals

1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Super-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

1.0A GLASS PASSIVATED SUPERFAST RECOVERY DIODE

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SURFACE MOUNT ULTRAFAST EFFICIENT RECTIFIER

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（超）快恢复二极管

超快恢复二极管

1.0A SURFACE MOUNT GLASS PASSIVATED SUPERFAST DIODE

Low Profile 1.08mm Max. Case Height Glass Passivated Die Construction Low Forward Voltage Drop, High Efficiency Surge Overload Rating to 30A Peak Super-Fast Recovery Time Ideally Suited for Automatic Assembly Plastic Material – UL Recognition Flammability Classification 94V-0

二极管

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE: 50 to 400 Volts CURRENT: 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 500 mW (With a printed-circuit board) • Wide voltage range: VZ = 2.0 V to 39 V • Easy-to-use because of the fine

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

MICROMACHINED ACCELEROMETER

The XMMA series of silicon capacitive, micromachined accelerometers features; signal conditioning, a 4–pole low pass filter and temperature compensation. Zero–g offset full scale span and filter cut–off are factory set and require no external devices. A full system self–test capability verifies sy