Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications

High-Speed Switching Applications Power Management Switch Applications • 1.5 V drive • Low ON-resistance: Ron = 353 mΩ (max) (@VGS = −1.5 V) Ron = 193 mΩ (max) (@VGS = −1.8 V) Ron = 125 mΩ (max) (@VGS = −2.5 V)

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf