10A SUPER-FAST GLASS PASSIVATED RECTIFIER

Features • Glass Passivated Die Construction • Super-Fast Switching • Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Current Capability • Plastic Material has UL Flammability Classification 94V-O

SUPERFAST RECOVERY RECTIFIERS(VOLTAGE- 50 to 400 Volts CURRENT- 10.0 Amperes)?

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low fo

10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

Glass Passivated Die Construction Superfast 35nS and 50nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

Glass Passivated Die Construction Superfast 35nS and 50nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Epoxy Meets UL 94V-0 Classification Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

Super Fast Rectifiers

极快速恢复整流器

超快恢复二极管

10A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER

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SUPERFAST RECOVERY RECTIFIERS

文件：43.42 Kbytes Page：2 Pages

SUPERFAST RECOVERY RECTIFIERS

文件：85.19 Kbytes Page：2 Pages

封装/外壳：TO-220-3 包装：管件 描述：TO-220AB, SUPER 分立半导体产品 二极管 - 整流器 - 阵列

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

MICROWAVE POWER TRANSISTORS

The RF Line Microwave pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 2.0 Watts Peak Minimum Gain = 10 dB • 100 Tested

Integrated Circuit FM IF TV Amp

Features: ● Excellent Limiting Characteristics ● High Gain ● High AM Rejection Ratio ● Wide Band Amp