N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 4.5V drive • Halogen free compliance • Large current • Slim package • Protection diode in

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications

文件：449.37 Kbytes Page：7 Pages

Ka Band Low Noise Amplifier

Key Features and Performance • 0.15um pHEMT Technology • 21-27 GHz Frequency Range • 2 dB Nominal Noise Figure • 19 dB Nominal Gain • 12 dBm Pout • 3V, 45 mA Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications

Ka Band Low Noise Amplifier

Key Features and Performance • 0.15um pHEMT Technology • 21-27 GHz Frequency Range • 1.75 dB Nominal Noise Figure • 19 dB Nominal Gain • 8dBm Pout • 3V, 45 mA Self -biased Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications

Ka Band Wideband LNA/Driver

Key Features and Performance • 0.15um pHEMT Technology • 16-30 GHz Frequency Range • 2.5 dB Nominal Noise Figure midband • 21 dB Nominal Gain • 14 dBm Pout • Bias 5V, 60 mA with -0.5V Primary Applications • Point-to-Point Radio • Point-to-Multipoint Communications

Multiple Modulation Standard Infrared Receiver

文件：281.99 Kbytes Page：12 Pages

Multiple Modulation Standard Infrared Receiver

文件：281.99 Kbytes Page：12 Pages