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ENA1163

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converters, relay drivers, lamp drivers, motor

SANYO

三洋

ENA1163

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

ONSEMI

安森美半导体

DOLBY B TYPE NOISE REDUCTION SYSTEM

Description CXA1100, CXA1101, CXA1102 and CXA1163 are ICs including two separate Dolby B type noise reduction processors. Seven devices with four Dolby levels and two types of package are provided for various applications. These devices feature very few external components, which is achieved by

SONYSony Corporation

索尼

High Output, Short Arc Xenon Flashlamp with Internal Reflector

Description The FX-1160 Reflector Lamp has greater than 40 more usable light intensity than our standard FX-1150 and is completely interchangeable. PerkinElmer customers have the option of either taking advantage of the greatly increased light output or they can operate the FX-1160 at a reduced i

PERKINELMER

40-Bit Anode Driver

GENERAL DESCRIPTION The MSC1163 is a monolithic IC using the Bi-CMOS process for hybridizing CMOS and bipolar transistors on the same chip. The logic portion such as the input stage, shift register and latch is fabricated by CMOS and the output driver requiring a high withstand voltage is fabri

OKIOki Electric Cable Co.,Ltd

冲电线日本冲电线株式会社

PROGRAMMABLE SYNCHRONOUS DC/DC CONVERTER WITH LOW DROPOUT REGULATOR CONTROLLER

DESCRIPTION The SC1162/3 combines a synchronous voltage mode controller with a low-dropout linear regulator providing most of the circuitry necessary to implement two DC/DC converters for powering advanced microprocessors such as Pentium® II. FEATURES • Synchronous design, enables no he

SEMTECH

先之科

GaAlAs Infrared Emitting Diodes

DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.

PERKINELMER

ENA1163产品属性

  • 类型

    描述

  • 型号

    ENA1163

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

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    EN87C196KC20 进口原装,军工裸片。

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