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型号 功能描述 生产厂家 企业 LOGO 操作
ENA1126

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

文件:484.56 Kbytes Page:8 Pages

SANYO

三洋

Photo Transistor Chip

Features • Light Activated Photo Transistor Chip • Planar NPN • Aluminum Wire bondable • Backside Metallization - Gold • Die Attach methods: Eutectic or Epoxy

MICROSEMI

美高森美

Melody IC with Built-in SRAM

OVERVIEW The SM1126 Series are melody ICs for use in mobile telecommunications equipment. A maximum of 15 melodies can be stored in programmable ROM and one in built-in read/write SRAM. FEATURES ■ 2.0 to 3.6 V supply voltage ■ Maximum of 16 melody selections (15 in ROM + 1 in SRAM) ■ Level ho

NPC

Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps

文件:250.23 Kbytes Page:8 Pages

LINER

凌力尔特

Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps

文件:250.23 Kbytes Page:8 Pages

LINER

凌力尔特

Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps

文件:250.23 Kbytes Page:8 Pages

LINER

凌力尔特

ENA1126产品属性

  • 类型

    描述

  • 型号

    ENA1126

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

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