NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications Features • High cutoff frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz)

NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications

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10-bit D-type flip-flop; positive-edge trigger 3-State

DESCRIPTION The 74ABT821 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high output drive. FEATURES • High speed parallel registers with positive edge-triggered D-type flip-flops • Ideal where high speed, light loading, or increased fan-in

Single Color Ultra High Brightness Type

Product Features ● Outer Dimension 1.6 x 0.8 x 0.7mm ( L x W x H ) ● Low Current Type (IF=5mA) ● Temperature Range Storage Temperature： -40℃～ 100℃ Operating Temperature： -40℃～ 85℃ ● Lead-Free Soldering compatible ● RoHS Compliant

Square Air Core Inductors

• Excellent Q factors – 210 at 400 MHz! • Inductance values from 27 to 47 nH • Flat top and bottom for reliable pick and place and mechanical stability

Square Air Core Inductors

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Square Air Core Inductors

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