RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP

RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP Features • High cut-off frequency : fT=1.5GHz typ • High gain : ⏐S21e⏐2=13dB typ (f=0.4GHz) • Ultrasmall package permitting applied sets to be small and slim Applications • VHF, RF, MIXER, OSC, IF amplifier

NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifi er Applications

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RF Transistor 10V, 70mA, fT=1.5GHz, NPN Single MCP

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Melody IC

Optocoupler with Phototransistor Output

DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. FEATURES • High common mode rejection • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides

SOLID STATE I/O INTERFACE MODULE (DC INPUT MODULE)

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