Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching Applicaitons • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes

High Current Switching Applications

文件：487.92 Kbytes Page：7 Pages

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single NMP

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

4 X 13 - 2 X 38W AUDIO POWER AMPLIFIER 2 X 13 1 X 38W AUDIO POWER AMPLIFIER

1. HIGH OUTPUT POWER CAPABILITY 2. MINIMUM EXTERNAL COMPONENTS COUNT: – NO BOOTSTRAP CAPACITORS – NO BOUCHEROT CELLS – INTERNALLY FIXED GAIN (26dB BTL) 3. ST-BY FUNCTION (CMOS COMPATIBLE) 4. NO AUDIBLE POP DURING ST-BY OPERATIONS

RF AMPLIFIER

文件：71.05 Kbytes Page：1 Pages