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EN6560B

General-Purpose Switching Device Applications

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SANYO

三洋

EN6560B

General-Purpose Switching Device Applications

ONSEMI

安森美半导体

POWER FACTOR CORRECTOR

DESCRIPTION The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the

STMICROELECTRONICS

意法半导体

POWER FACTOR CORRECTOR

DESCRIPTION The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the

STMICROELECTRONICS

意法半导体

POWER FACTOR CORRECTOR

DESCRIPTION The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption. Realized in mixed BCD technology, the

STMICROELECTRONICS

意法半导体

Audio Transistor

Audio Transistor NPN Silicon

MOTOROLA

摩托罗拉

NPN (AUDIO TRANSISTOR)

AUDIO TRANSISTOR • Collector-Emitter Voltage: VCEO = 25V • Collector Dissipation: pc(max)=625mW

SAMSUNG

三星

EN6560B产品属性

  • 类型

    描述

  • 型号

    EN6560B

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    General-Purpose Switching Device Applications

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