位置：首页 > IC中文资料 > EN29LV160T-70BI
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29LV160T-70BI | 16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜扬科技 |   | |
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜扬科技 | | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only | EON 宜扬科技 | | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜扬科技 | | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜扬科技 | | ||
16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only GENERAL DESCRIPTION The EN29LV160 is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160 features 3.0V voltage read and write operation, with access times as fast a | EON 宜扬科技 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
23+ |
TSOP-48 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
EON |
2023+ |
FBGA48 |
6671 |
原厂全新正品旗舰店优势现货 |
|||
EON |
25+ |
FBGA48 |
860000 |
明嘉莱只做原装正品现货 |
|||
EON |
25+ |
TSOP48 |
2650 |
原装优势!绝对公司现货 |
|||
EON |
23+ |
TSOP |
5000 |
原装正品,假一罚十 |
|||
EON |
24+ |
NA/ |
6671 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
EON |
24+ |
TSOP48 |
35200 |
原装现货/放心购买 |
|||
EON |
25+ |
FBGA48 |
6671 |
原装正品,假一罚十! |
|||
EON |
24+ |
FBGA48 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON |
24+ |
FBGA48 |
9600 |
原装现货,优势供应,支持实单! |
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EN29LV160T-70BI规格书下载地址
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EN29LV160T-70BI数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
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2019-10-26
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