型号 功能描述 生产厂家 企业 LOGO 操作

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY

GENERAL DESCRIPTION The EN29LV160A is a 16-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 8µs. The EN29LV160A features 3.0V voltage read and write operation, with access times as fast

EON

宜扬科技

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only

EON

宜扬科技

EN29LV160AB-70产品属性

  • 类型

    描述

  • 型号

    EN29LV160AB-70

  • 制造商

    EON-CFEON

更新时间:2025-11-4 20:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
eon
23+
NA
156
专做原装正品,假一罚百!
EON/宜扬
25+
TSOP
65248
百分百原装现货 实单必成
EON/宜扬
24+
NA/
6777
原装现货,当天可交货,原型号开票
EON
24+
TSOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
EON
652
TSSOP
4
一级代理,专注军工、汽车、医疗、工业、新能源、电力
EON
24+/25+
880
原装正品现货库存价优
EON
23+
TSOP48
29382
##公司主营品牌长期供应100%原装现货可含税提供技术
EON
24+
SMD
12000
原厂/代理渠道价格优势
EON
25+
DIP-24
18000
原厂直接发货进口原装
EON
25+
TSOP48
880000
明嘉莱只做原装正品现货

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