位置：首页 > IC中文资料第6679页 > EN29F512-90PI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29F512-90PI | 512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 |   | |
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | |
EN29F512-90PI产品属性
- 类型
描述
- 型号
EN29F512-90PI
- 制造商
EON
- 制造商全称
Eon Silicon Solution Inc.
- 功能描述
512 Kbit(64K x 8-bit) 5V Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
2447 |
SOP44 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
EON |
23+ |
SOP44 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
EON |
23+ |
SOP44 |
50000 |
全新原装正品现货,支持订货 |
|||
EON |
23+ |
TSOP48 |
4200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
EON |
24+ |
TSOP48 |
650 |
||||
EON |
2023+ |
SOP44 |
8635 |
一级代理优势现货,全新正品直营店 |
|||
EON |
24+ |
SOP44 |
37279 |
郑重承诺只做原装进口现货 |
|||
EON |
2402+ |
TSOP48 |
8324 |
原装正品!实单价优! |
|||
CFEON |
2022+ |
BGA |
1000 |
原厂代理 终端免费提供样品 |
|||
EON |
2025+ |
TSOP48 |
3768 |
全新原厂原装产品、公司现货销售 |
EN29F512-90PI规格书下载地址
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EN29F512-90PI数据表相关新闻
EN5311QI
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製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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