位置：首页 > IC中文资料第6679页 > EN29F512-70TI
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29F512-70TI | 512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 |   | |
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | | ||
512 Kbit (64K x 8-bit) 5V Flash Memory GENERAL DESCRIPTION The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory. Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each. Any byte can be programmed typically in 7µs. The EN29F512 features 5 | EON 宜扬科技 | |
EN29F512-70TI产品属性
- 类型
描述
- 型号
EN29F512-70TI
- 制造商
EON
- 制造商全称
Eon Silicon Solution Inc.
- 功能描述
512 Kbit(64K x 8-bit) 5V Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
24+ |
NA/ |
10 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
EON |
24+ |
TSSOP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
CFEON |
10+ |
BGA |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
EON |
21+ |
SOP44 |
15 |
原装现货假一赔十 |
|||
EON |
23+ |
SOP44 |
28000 |
原装正品 |
|||
EON |
25+23+ |
56-pinTSO |
20679 |
绝对原装正品全新进口深圳现货 |
|||
EON |
23+ |
TSOP48 |
4200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
EON |
24+ |
TSOP48 |
650 |
||||
EON |
2402+ |
TSOP48 |
8324 |
原装正品!实单价优! |
|||
EON |
24+ |
SOP44 |
37279 |
郑重承诺只做原装进口现货 |
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EN29F512-70TI规格书下载地址
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EN29F512-70TI数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
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