位置：首页 > IC中文资料第6624页 > EN29F002
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN29F002 | 2 Megabit (256K x 8-bit) Flash Memory 文件：267.13 Kbytes Page：32 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |   | |
EN29F002 | 2 Megabit (256K x 8-bit) Flash Memory | EON 宜扬科技 | | |
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | | ||
2 Megabit (256K x 8-bit) Flash Memory GENERAL DESCRIPTION The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory. Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byt | EON 宜扬科技 | |
EN29F002产品属性
- 类型
描述
- 型号
EN29F002
- 功能描述
2 Megabit(256K x 8-bit) Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
25+23+ |
DIP |
47217 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
EON |
00+ |
PLCC/32 |
210 |
原装现货海量库存欢迎咨询 |
|||
EON |
21+ |
PLCC32 |
8080 |
只做原装,质量保证 |
|||
EON |
24+ |
DIP |
7850 |
只做原装正品现货或订货假一赔十! |
|||
EON |
24+ |
DIP-32 |
9600 |
原装现货,优势供应,支持实单! |
|||
EON |
24+ |
DIP |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON |
23+ |
TSOP32 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
EON |
02+ |
DIP |
13 |
原装 |
|||
EON |
25+ |
PLCC |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
EON |
2023+ |
PLCC32 |
6895 |
原厂全新正品旗舰店优势现货 |
EN29F002规格书下载地址
EN29F002参数引脚图相关
- FPC连接器
- fp6290
- foxconn
- fml22s
- flotherm
- finder继电器
- fc114
- fangtek
- f83
- f411
- f4031
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EN3947F
- EN3906A
- EN3814
- EN3582A
- EN3578A
- EN3559
- EN3515C
- EN3416A
- EN3309D
- EN3240C
- EN3235A
- EN3096A
- EN3094B
- EN3093A
- EN3089C
- EN3088C
- EN3056
- EN3026B
- EN3025A
- EN300
- EN29F002AB-55PI
- EN29F002AB-55PCP
- EN29F002AB-55PC
- EN29F002AB-55JIP
- EN29F002AB-55JI
- EN29F002AB-55JCP
- EN29F002AB-55JC
- EN29F002AB-45TIP
- EN29F002AB-45TI
- EN29F002AB-45TCP
- EN29F002AB-45TC
- EN29F002AB-45PIP
- EN29F002AB-45PI
- EN29F002AB-45PCP
- EN29F002AB-45PC
- EN29F002AB-45JIP
- EN29F002AB-45JI
- EN29F002AB-45JCP
- EN29F002AB-45JC
- EN29F002A
- EN2999C
- EN2997KE61831A9
- EN2997KE61831A8
- EN2997KE61831A7
- EN2997KE61831A6
- EN2997KE61814MN
- EN2997KE61814M9
- EN2997KE61814M8
- EN2997KE61814M7
- EN2997KE61814M6
- EN2997KE61814FN
- EN2997KE61814F7
- EN2997K60803BN
- EN2997K60803B9
- EN2997K60803B8
- EN2997K60803B7
- EN2997K60803B6
- EN2997K60803AN
- EN2997K60803A9
- EN2997K60803A8
- EN2997K60803A7
- EN2981C
- EN2855
- EN2828
- EN2817C
- EN2797B
- EN25T80
- EN25S80
- EN25S64
- EN25S40
- EN25S32
- EN25S20
- EN25S16
- EN25S10
- EN25Q64
- EN25Q40
- EN25Q32
- EN25Q16
- EN25P80
- EN25P64
EN29F002数据表相关新闻
EN5311QI
EN5311QI
2023-12-1EN5322QI
进口代理
2023-5-26EN5311QI
製造商: Intel 產品類型: 轉換電壓穩壓器 RoHS: 詳細資料 安裝風格: SMD/SMT 封裝/外殼: QFN-20 輸出電壓: 600 mV to 6 V 輸出電流: 1 A 輸出數: 1 Output 最高輸入電壓: 6.6 V 拓撲學: Buck 輸入電壓 最小: 2.4 V 交換頻率: 4 MHz 最低工作溫度: - 40 C 最高工作溫度: + 85 C 系列: EN53xx
2020-10-27EN25QH32B-104HIP
EN25QH32B-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25QH16-104HIP
EN25QH16-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26EN25Q32C-104HIP
EN25Q32C-104HIP，全新原装当天发货或门市自取0755-82732291.
2019-10-26
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
