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2.0A Single-Phase Bridge Rectifier

文件:683.37 Kbytes Page:2 Pages

ONSEMI

安森美半导体

Schottky Barrier Diodes

FEATURES • Integrated protection ring against static    discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS

VISHAYVishay Siliconix

威世威世科技公司

PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

POLYFET

1036- 횞 1010-pixel ccd image sensor

文件:238.9 Kbytes Page:18 Pages

TI

德州仪器

Low Dropout 1 Ampere Linear Regulator Family

文件:102.7 Kbytes Page:10 Pages

TI

德州仪器

Low Dropout 1 Ampere Linear Regulator Family

文件:102.7 Kbytes Page:10 Pages

TI

德州仪器

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    EN25QH16-104HIP,全新原装当天发货或门市自取0755-82732291.

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    EN25Q32C-104HIP,全新原装当天发货或门市自取0755-82732291.

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