1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

GENERAL DESCRIPTION The EN25S10 is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25S10 is designed to allow

1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

GENERAL DESCRIPTION The EN25S10 is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25S10 is designed to allow

1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

GENERAL DESCRIPTION The EN25S10 is a 1 Megabit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25S10 is designed to allow

1 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector

文件：1.13351 Mbytes Page：64 Pages

Serial NOR Flash (SPI)

25A SINGLE PHASE BRIDGE RECTIFIER

Diffused Junction Low Forward Voltage Drop High Current Capability Low Thermal Resistance High Surge Current Capability Vertical Mount Ideally Suited for Space Constrained Applications Recognized File # E157705

Semiconductor Fuses

文件：310.21 Kbytes Page：4 Pages