位置:首页 > IC中文资料第11000页 > EN25F20
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EN25F20 | 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | ||
EN25F20 | 2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | ||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector GENERAL DESCRIPTION The EN25F20 is a 2M-bit (256K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The EN25F20 is designed to allow eit | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector 文件:1.28942 Mbytes Page:33 Pages | EON 宜扬科技 | |||
2 Megabit Serial Flash Memory with 4Kbyte Uniform Sector 文件:1.0838 Mbytes Page:61 Pages | EON 宜扬科技 | |||
Standard Recovery Diodes(Stud Version), 25 A Standard Recovery Diodes (Stud Version), 25 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • RoHS compliant TYPICAL APPLICATIONS • Battery charges • Converters • Power supplies • | VISHAYVishay Siliconix 威世威世科技公司 | |||
STANDARD RECOVERY DIODES STANDARD RECOVERY DIODES Features High surge current capability Avalanche types available Stud cathode and stud anode version Wide current range Types up to 1200V VRRM Typical Applications Battery charges Converters Power supplies Machine tool controls | IRF | |||
STANDARD RECOVERY DIODES STANDARD RECOVERY DIODES Features High surge current capability Avalanche types available Stud cathode and stud anode version Wide current range Types up to 1200V VRRM Typical Applications Battery charges Converters Power supplies Machine tool controls | IRF | |||
Standard Recovery Diodes(Stud Version), 25 A Standard Recovery Diodes (Stud Version), 25 A FEATURES • High surge current capability • Stud cathode and stud anode version • Wide current range • Types up to 1200 V VRRM • RoHS compliant TYPICAL APPLICATIONS • Battery charges • Converters • Power supplies • | VISHAYVishay Siliconix 威世威世科技公司 | |||
Standard Recovery Diodes (Stud Version) 文件:112.35 Kbytes Page:2 Pages | NAINA |
EN25F20产品属性
- 类型
描述
- 型号
EN25F20
- 制造商
EON
- 制造商全称
Eon Silicon Solution Inc.
- 功能描述
2 Mbit Serial Flash Memory with 4Kbytes Uniform Sector
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
EON |
2016+ |
SOP8 |
2000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
EON |
24+ |
SOP8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
EON/宜扬 |
2026+ |
SOP8 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ESMT/晶豪科技 |
25+ |
USON8 |
15620 |
ESMT/晶豪科技全新特价EN25F20A-104XFIP2N即刻询购立享优惠#长期有货 |
|||
24+ |
SOP-8 |
20000 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
||||
ESMT/晶豪科技 |
2450+ |
USON8 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
EON |
25+ |
SOP-8 |
10500 |
全新原装现货 假一赔十 |
|||
EON |
SOP8 |
2000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
EON |
1425+ |
VDFN |
555 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
EON-宜扬 |
25+ |
SOP-8 |
880000 |
明嘉莱只做原装正品现货 |
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EN25F20规格书下载地址
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