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型号 功能描述 生产厂家 企业 LOGO 操作
EN2540B

Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

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ONSEMI

安森美半导体

Silicon NPN Transistor Darlington, High Voltage Switch

Features: • High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A) • Monolithic Construction w/Built–In Base–Emitter Shunt Resistor

NTE

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2545CT series is supplied in the SOT7

PHILIPS

飞利浦

Rectifier diodes Schottky barrier

GENERAL DESCRIPTION Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR2545CT series is supplied in the SOT7

PHILIPS

飞利浦

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere)

VOLTAGE 20 to 100 Volts CURRENT 25 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd v

PANJIT

強茂

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere)

VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. •

PANJIT

強茂

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