P-Channel Enhancement-Mode MOSFET (-20V, -2.0A)

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Reflective Photosensor

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

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PLLatinumTM 160 MHz Frequency Synthesizer for RF Personal Communications

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EXCALIBUR 3-STATE-OUTPUT WIDE-BANDWIDTH POWER OPERATIONAL AMPLIFIER

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