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型号 功能描述 生产厂家 企业 LOGO 操作
EN2113E

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Adoption of FBET and MBIT processes • Large current capacitance and wide ASO • Low collector to emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1202/2SD1

ONSEMI

安森美半导体

EN2113E

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

ONSEMI

安森美半导体

HIGH AND LOW SIDE DRIVER

The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Th

MOTOROLA

摩托罗拉

HIGH AND LOW SIDE DRIVER

The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Th

MOTOROLA

摩托罗拉

HIGH AND LOW SIDE DRIVER

The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. Th

MOTOROLA

摩托罗拉

LOW VOLTAGE AUDIO POWER AMPLIFIER

文件:156.89 Kbytes Page:4 Pages

NJRC

日本无线

LOW VOLTAGE AUDIO POWER AMPLIFIER

文件:156.89 Kbytes Page:4 Pages

NJRC

日本无线

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